The global Gallium Nitride (GaN) substrate Market is estimated to surpass $5.18 billion mark by 2023 growing at an estimated CAGR of more than 8.95% during 2018 to 2023. The market is majorly driven by two important characteristics i.e. higher switching capacity and high-temperature tolerance. In addition, wide bandgap substrates are emerging as a suitable replacement for conventional substrates because of its capability to enable small devices with higher performance efficiency. The wide bandgap substrate not only improves the performance but also saves energy and cut down the losses. What is Gallium Nitride and Gallium Nitride Substrates? GaN is wide bandgap material or banding material which possesses remarkable advantages over other semiconductor material such as Silicon, Silicon Carbide, Aluminum, and others. The nitride devices such as light emitters, transistors, diodes are largely dependent on the hetero-epitaxial growth of GaN on foreign substrates such as Silicon, Silic...